Discovery of new growth-directed graphene stacking domains may precede new era for quantum applications
Graphene, a single layer of carbon atoms arranged in a two-dimensional honeycomb lattice, is known for its remarkable properties: incredible strength (about 200 times stronger than steel), light weight, flexibility, and excellent electrical and thermal conductivity performance. These properties make graphene increasingly important for applications in various fields including electronics, energy storage, medical technology and, most recently, quantum computing.
It is known that graphene’s quantum properties, such as superconductivity and other unique quantum behaviors, arise when graphene’s atomic layers are precisely stacked and twisted to create “ABC stacked domains.” Historically, realizing ABC-stacked domains required peeling off graphene and manually twisting and aligning the layers in precise directions, a highly complex process that has been difficult to scale to industrial applications.
Now, researchers at NYU Tandon School of Engineering, led by Elisa Riedo, the Herman F. Mack Professor of Chemical and Biomolecular Engineering, have discovered a new phenomenon in graphene research, observing growth-induced self-organizing ABA and ABC stacking. domains that may lead to the beginning of the development of advanced quantum technologies. The findings were published in a recent study Proceedings of the National Academy of Sciences (PNAS)demonstrated how specific stacking arrangements in a three-layer epitaxial graphene system emerge naturally—eliminating the need for complex, non-scalable techniques traditionally used in graphene twist fabrication.
These researchers, including former NYU postdoctoral researcher Martin Rejhon, have now observed the self-assembly of ABA and ABC domains in a three-layer epitaxial graphene system grown on silicon carbide (SiC). Using advanced conductive atomic force microscopy (AFM), the team found that these domains formed naturally, without the need for manual twisting or alignment. This spontaneous organization represents an important step in the fabrication of stacked graphene domains.
The size and shape of these stacked domains are affected by strain interactions and the geometry of the three-layer graphene regions. Some domains form strip-like structures with widths of tens of nanometers and extending beyond micrometers, offering broad prospects for future applications.
“In the future we can control the size and position of these stacked patterns through pre-grown patterns on the SiC substrate,” Riedo said.
These self-assembled ABA/ABC stacked domains may lead to transformative applications in quantum devices. For example, their strip structure is ideal for realizing the unconventional quantum Hall effect, superconductivity and charge density waves. These breakthroughs pave the way for scalable electronic devices that take advantage of graphene’s quantum properties.
The discovery marks a major leap forward for graphene research, bringing scientists closer to realizing the full potential of this extraordinary material in next-generation electronics and quantum technologies.
Funding for this research came from the U.S. Army Research Office under award number W911NF2020116. The study also included researchers from Charles University in Prague.
2024-12-10 21:35:15